Abstract: In this report, we have proposed and investigated p-GaN HEMT for improved performance. The proposed device utilises a double T-field plate at the gate electrode of the proposed device to ...
A Docker image is available at ghcr.io/gabe565/webos-dev-mode sudo docker run --rm -it ghcr.io/gabe565/webos-dev-mode cron --token SESSION_TOKEN ...
Abstract: E-mode power HEMTs with epitaxially grown p-AlN/p-GaN gate are demonstrated for the first time to enhance the gate reliability, including the positive bias temperature instability (PBTI), ...
AI Mode will preface its list of sources with an AI-generated snippet about why they’re relevant. AI Mode will preface its list of sources with an AI-generated snippet about why they’re relevant. is a ...
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