Abstract: In this article, a novel SiC trench MOSFET with integrated Schottky super barrier rectifier (SSBR-TMOS) is proposed and studied by TCAD simulations. The SSBR is introduced as a replacement ...
Abstract: The H-bridge semi-controlled rectifier (HBSCR), with its advantages of high output power, short commutation time and low loss, has become one of the potential options for the controlled ...
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