As we all observe space missions are long term projects fraught with delays and unwanted failures, but with the successful landing of NASA’s Curiosity, LASER COMPONENTS were particularly pleased.

X-FAB Silicon Foundries SE, the analogue/mixed-signal and specialty foundry, has introduced additional optoelectronic device options. Leveraging the company’s 180nm XS018 CMOS semiconductor process, ...

SiC is the standard material used in “solar blind” UV photodiodes because this material is UV sensitive and also very robust. The new JEC1.7l photodiode has a chip size of 1.7 mm2. At its peak, this ...

The TEMD5080X01 PIN photodetector has 400-nm (UV) sensitivity 300% higher than that of a standard PIN photodiode. With an overall sensitivity range of 350 to 1,100 nm, the AEC-Q101-qualified device ...

X-FAB Silicon Foundries, the analogue/mixed-signal and specialty foundry, has introduced additional optoelectronic device options to strengthen its extensive portfolio. Leveraging the company’s 180nm ...

Researchers have demonstrated visible-blind avalanche photodiodes capable of detecting single photons in the ultraviolet region (360-200 nm). This is a world's first for demonstrating back-illuminated ...

Mass production technology for silicon based ultraviolet (UV) light sensors, suitable for smartphones and wearable devices in the Internet of Things (IoT) era, has been developed. Mass production ...

Date Announced: 28 May 2013 Opto Diode (www.optodiode.com), a division of ITW, and a member of the ITW Photonics Group, introduces a highly reliable, 16-element photodiode that is ideal for UV/EUV or ...

A line of UV GaAs photodiodes with spectral sensitivity spanning 150 to 570 nm is available. Optionally, spectral sensitivity is limited to 245 to 400 nm if integrated UV-filter glass windows are ...

X-Fab Silicon Foundries has added a photodiode-specific process core module to its XS018 180nm CMOS sensor process – previously XS018 had been focused on the fabrication of multi-pixel CMOS image ...