Carrier recombination in single Shockley stacking faults (1SSFs) and at partial dislocations (PDs) was observed, which induced the expansion of 1SSFs. Disclaimer: AAAS and EurekAlert! are not ...
To improve the performance of SiC, numerous studies of the formation and the propagation of defects during crystal growth have been carried out. Though the results have resulted in major advancements ...
SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...
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