Gallium Phosphide (GaP) epitaxy on silicon substrates represents a critical frontier in semiconductor heterointegration, combining the superior optoelectronic properties of III–V materials with ...

In the quest to design more efficient solar cells and light-emitting diodes (LEDs), a team of engineers has analyzed different types of defects in the semiconductor material that enables such devices ...

Silicon carbide (SiC) is a promising semiconductor material for power electronic devices, but it suffers from bipolar degradation, which severely limits its lifespan. To address this long-standing ...

Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...

Engineers have studied the structure and properties of the commonly occurring planar defects at the atomic scale, which spans only a few tenths of a nanometer. In the quest to design more efficient ...

Silicon carbide (SiC) is a semiconductor material that outperforms pure silicon-based semiconductors in several applications. Used mostly in power inverters, motor drives, and battery chargers, SiC ...