MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...

SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...

The first product released – AOK040A60 is a 600V 40mOhm αMOS5 low ohmic device with the industry-standard TO-247 package tailored to address the thermal challenges of today’s high-power AC/DC, DC/DC, ...

Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

While microcontroller- and DSP-based approaches for implementing advanced motor control techniques, such as field-oriented control (FOC) for 3-phase motors, have gone a long way to simplify ...

MALVERN, Pa., Dec. 02, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...

αMOS5 is AOS’s latest generation of high voltage MOSFET, and has been designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, Industrial Power, ...

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...