DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Miscellaneous IGBT vs SiC MOSFET comparison: Structure and Cost Analysis" report to their offering. The report provides ...

Since the first commercially available silicon-based power MOSFETs were introduced almost 40 years ago, they (along with their cousins, IGBTs) have been the primary power-handling control component in ...

Power applications in the industrial sector are often based on powerful electric motors, used in fans, pumps, servo drives, compressors, sewing machines and refrigerators that operate continuously.

Power Integrations is sampling a family of plug-and-play gate drivers for 62 mm SiC MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Power semiconductor devices such as SiC MOSFETs, IGBT, and GaN are experiencing increasingly fierce competition in EV, charging pile, energy storage, and renewable energy applications, but their ...

Littelfuse launched IX4352NE, a Low-side SiC MOSFET and IGBT Gate Driver IC specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in ...

Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...

Texas Instruments is aiming at electric vehicle traction inverters with a functional safety-compliant isolated gate driver for silicon carbide mosfets and IGBTs. Called UCC5880-Q1, it is in ...

Dublin, Aug. 06, 2020 (GLOBE NEWSWIRE) -- The "Automotive IGBT Industry Report, 2020" report has been added to ResearchAndMarkets.com's offering. IGBT (Insulated Gate Bipolar Transistor) is a fully ...

When compared with traditional 3-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design is able to support an even loss distribution between semiconductor ...

Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V. With enhanced protection features to ...