High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. ERIC R. MOTTO Powerex Inc. High power IGBT module ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...
For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...
Minimum Gate Input Pulse Width Characteristics & Gate Voltage Waveform Comparison Fast switching with a minimum gate input pulse width of 1.25ns; suppresses gate voltage overshoot Santa Clara, CA and ...
CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like ...
Infineon has introduced 2.3kV isolated gate drivers for IGBTs and mosfets with on-the-fly switchable dual slew-rates. Branded ‘2L-SRC Compact’ and numbered ‘1ED32xx’, 10 and 18A versions are available ...
BEVERLY, Mass.--(BUSINESS WIRE)--IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ:IXYS), today announced that the IXD_614SI family has been added to ...
STMicroelectronics' L98GD8 driver has eight fully configurable channels for driving MOSFETs in flexible configurations.
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