New Electronics

Infineon unveils its first gallium nitride 100 V automotive-qualified transistors

Infineon has started supplying samples of its CoolGaN Automotive Transistor 100 V G1 family which is qualified for automotive ...
EDN

100-V GaN transistors meet automotive standard

Infineon’s CoolGaN 100-V G1 family of GaN-based transistors are qualified to the AEC-Q101 automotive standard.
EDN

GaN power transistors take aim at MOSFETs

I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...

MIT spinoff Vertical Semiconductor gets $11M to build more power-efficient AI chips

Vertical Semiconductor Inc. is hoping to crack the power delivery bottleneck in artificial intelligence data centers after ...
Business Wire

IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE ...
Electronic Design

GaN Transistors Up the Game in Reliability and Power Efficiency

Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...
Business Wire

Panasonic to Launch Industry's Smallest Enhancement-Mode 600V GaN Power Transistors Package

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.
Electronics Weekly

GaN half-bridge driver chip for 72Vdc and 110Vac

STMicroelectronics is aiming at industrial and telecom power supplies with half-bridge driver for GaN power transistors. With a maximum rail voltage of 220V, STDRIVEG211, as it will be known, is ...
The Financial

Panasonic Develops Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
Electronic Design

Master The Fundamentals Of Your Gallium-Nitride Power Transistors

The basic design requirements for power semiconductors are efficiency, reliability, controllability, and cost-effectiveness. High-frequency capability adds further value in system size and transient ...