COLORADO SPRINGS, Colo.--(BUSINESS WIRE)--Frontgrade Technologies, a leading provider of mission critical electronics for aerospace and defense, has become the first company to successfully qualify to ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower™ Stage GaN IC with embedded gate driver function and ...
Silicon (Si)-based semiconductors have a decades-long head start over wide-bandgap (WBG) semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN), and still own about 90% to 98% of ...
At Semicon Taiwan, Navitas Semiconductor announced GaNSafe, its fourth generation GaN technology. It is designed in a TOLL package to be rugged and protected in demanding environments and suitable for ...
Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...
Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results