Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Compared to traditional semiconductors (such as silicon), gallium ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written ...
Mitsubishi Electric Corp. has set Jan. 10, 2012 as the date for sampling two new high-electron mobility transistors (HEMTs), fabricated in gallium nitride and operating in the C band of 4 to 8 GHz.
Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN(R)) power devices, has introduced a new generation of 100 V integrated GaN power-stage ICs - E ...
LONDON--(BUSINESS WIRE)--March 15, 2004--The market for gallium nitride (GaN) laser diodes will grow at a CAAGR of 195 percent through 2008, according to a new study from Strategy Analytics, the ...
Two NASA teams are examining the use of gallium nitride, a crystal-type semiconductor compound first discovered in the 1980s, and currently used in consumer electronics such as laser diodes in DVD ...
String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages to ...
Delray Beach, FL, Feb. 21, 2025 (GLOBE NEWSWIRE) -- The report "RF Gallium Nitride Market by Device (Discrete RF Device, Integrated RF Device), wafer size, end user (Telecom Infrastructure, Satellite ...
[Asianometry] has been learning about gallium nitride semiconductors and shares what he knows in an informative video you can see below. This semiconductor material has a much higher bandgap voltage ...
CHRIS SCHODT: Silicon is over, or is it? Probably not. But there is some exciting tech out there that may change your devices all the way from laptops to electric cars. Welcome to "Upscaled," our ...
Vermont's Gallium-Nitride Tech Hub received $3.4 million to establish a cutting-edge microelectronics testing laboratory. The lab, slated to open in January 2026, will focus on gallium nitride (GaN) ...
In a recent research paper, Graphenea demonstrated the use of graphene as an intermediary layer to grow GaN-on-silicon devices. Semiconductors fabricated from third-group periodic table elements and ...
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