Multi-layer 3-dimensional (3D) vertical RRAM (VRRAM) PUF with in-cell stabilization scheme to improve both cost efficiency and reliability. The proposed PUF features excellent resistance against ...
(A) This is an illustration of the RRAM array with each memory cell comprising of one filament (sandwiched between two electrodes). In comparison to the surrounding insulator matrix, a number of ...
Due to its simple three-layer structure, Crossbar technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable ...
This study is led by Ying Zhang (doctoral student, Institute of Microelectronics, Chinese Academy of Sciences) and Dr. Xiaolong Zhao (postdoctor, School of Microelectronics, University of Science and ...
Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 Today we look at a partnership between Seagate and axle ai to ...